? 2007 ixys all rights reserved - 5 20073a MUBW30-12A6K ixys reserves the right to change limits, test conditions and dimensions. preliminary data converter - brake - inverter module (cbi ) npt igbt three phase rectifer brake chopper three phase inverter v rrm = 600 v v ces = 200 v v ces = 200 v i davm25 = 30 a i c25 = 9 a i c25 = 30 a i fsm = 320 a v ce(sat) = 2.9 v v ce(sat) = 3 v pin confguration see outlines. application: ac motor drives with ? input from single or three phase grid ? three phase synchronous or asynchronous motor ? electric braking operation features: ? high level of integration - only one power semiconductor module required for the whole drive ? inverter with npt igbts - low saturation voltage - positive temperature coeffcient - fast switching - short tail current ? epitaxial free wheeling diodes with hiperfast and soft reverse recovery ? industry standard package with insu lated copper base plate and soldering pins for pcb mounting ? temperature sense included package: ? ul registered ? industry standard e -pack part name (marking on product) mubw30-2a6k e72873
? 2007 ixys all rights reserved 2 - 5 20073a MUBW30-12A6K ixys reserves the right to change limits, test conditions and dimensions. ouput inverter t1 - t6 ratings symbol defnitions conditions min. typ. max. unit v ces collector emitter voltage t vj = 25c to 50c 200 v v ges v gem max. dc gate voltage max. transient collector gate voltage continuous transient 20 30 v v i c25 i c80 collector current t c = 25c t c = 80c 30 2 a a p tot total power dissipation t c = 25c 30 w v ce(sat) collector emitter saturation voltage i c = 30 a; v ge = 5 v t vj = 25c t vj = 25c 3.0 3.4 3.8 v v v ge(th) gate emitter threshold voltage i c = 0.6 ma; v ge = v ce t vj = 25c 4.5 6.5 v i ces collector emitter leakage current v ce = v ces ; v ge = 0 v t vj = 25c t vj = 25c .5 ma ma i ges gate emitter leakage current v ce = 0 v; v ge = 20 v 200 na c ies input capacitance v ce = 25 v; v ge = 0 v; f = mhz 000 pf q g(on) total gate charge v ce = 600 v; v ge = 5 v; i c = 7.5 a 70 nc t d(on) t r t d(off) t f e on e off turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load t vj = 25c v ce = 600 v; i c = 5 a v ge = 5 v; r g = 82 w 00 80 500 70 2.3 .8 ns ns ns ns mj mj i cm reverse bias safe operating area rbsoa; v ge = 5 v; r g = 82 w l = 00 h; clamped induct. load t vj = 25c v cemax = v ces - l s di/dt 45 a t sc (scsoa) short circuit safe operating area v ce = 200 v; v ge = 5 v; t vj = 25c r g = 82 w ; non-repetitive 0 s r thjc thermal resistance junction to case (per igbt) 0.95 k/w r thch thermal resistance case to heatsink (per igbt) 0.35 k/w output inverter d1 - d6 ratings symbol defnitions conditions min. typ. max. unit v rrm max. repetitve reverse voltage t vj = 50c 200 v i f25 i f80 forward current t c = 25c t c = 80c 49 32 a a v f forward voltage i f = 30 a; v ge = 0 v t vj = 25c t vj = 25c 2.0 2.9 v v i rm t rr e rec(off) max. reverse recovery current reverse recovery time reverse recovery energy v r = 600 v di f /dt = -500 a/s t vj = 25c i f = 30 a; v ge = 0 v 27 50 tbd a ns j r thjc thermal resistance junction to case (per diode) 0.9 k/w r thch thermal resistance case to heatsink (per diode) 0.3 k/w t c = 25c unless otherwise stated
? 2007 ixys all rights reserved 3 - 5 20073a MUBW30-12A6K ixys reserves the right to change limits, test conditions and dimensions. brake chopper t7 ratings symbol defnitions conditions min. typ. max. unit v ces collector emitter voltage t vj = 25c to 50c 200 v v ges v gem max. dc gate voltage max. transient collector gate voltage continuous transient 20 30 v v i c25 i c80 collector current t c = 25c t c = 80c 9 3 a a p tot total power dissipation t c = 25c 90 w v ce(sat) collector emitter saturation voltage i c = 5 a; v ge = 5 v t vj = 25c t vj = 25c 2.9 3.5 3.4 v v v ge(th) gate emitter threshold voltage i c = 0.4 ma; v ge = v ce t vj = 25c 4.5 6.5 v i ces collector emitter leakage current v ce = v ces ; v ge = 0 v t vj = 25c t vj = 25c 0.8 0.5 ma ma i ges gate emitter leakage current v ce = 0 v; v ge = 20 v 00 na c ies input capacitance v ce = 25 v; v ge = 0 v; f = mhz 600 pf q g(on) total gate charge v ce = 600 v; v ge = 5 v; i c = 0 a 45 nc t d(on) t r t d(off) t f e on e off turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load t vj = 25c v ce = 600 v; i c = 0 a v ge = 5 v; r g = 82 w 45 40 290 60 .2 . ns ns ns ns mj mj i cm reverse bias safe operating area rbsoa; v ge = 5 v; r g = 82 w l = 00 h; clamped induct. load t vj = 25c v cemax = v ces - l s di/dt 20 a t sc (scsoa) short circuit safe operating area v ce = 720 v; v ge = 5 v; t vj = 25c r g = 82 w ; non-repetitive 0 s r thjc thermal resistance junction to case (per igbt) .37 k/w r thch thermal resistance case to heatsink (per igbt) 0.45 k/w brake chopper d7 ratings symbol defnitions conditions min. typ. max. unit v rrm max. repetitive reverse voltage t vj = 50c 200 v i f25 i f80 forward current t c = 25c t c = 80c 5 0 a a v f forward voltage i f = 5 a; v ge = 0 v t vj = 25c t vj = 25c 2.0 3.5 v v i r reverse current v r = v rrm t vj = 25c t vj = 25c 0.2 0.06 ma ma i rm t rr max. reverse recovery current reverse recovery time v r = 600 v; i f = 0 a di f /dt = -400 a/s t vj = 25c 3 0 a ns r thjc thermal resistance junction to case (per diode) 2.5 k/w r thch thermal resistance case to heatsink (per diode) 0.05 k/w t c = 25c unless otherwise stated
? 2007 ixys all rights reserved 4 - 5 20073a MUBW30-12A6K ixys reserves the right to change limits, test conditions and dimensions. temperature sensor ntc ratings symbol defnitions conditions min. typ. max. unit r 25 b 25/85 resistance t c = 25c 4.45 4.7 350 5.0 k w k module ratings symbol defnitions conditions min. typ. max. unit t vj t vjm t stg operating temperature max. virtual junction temperature storage temperature -40 -40 25 50 25 c c c v isol isolation voltage i isol < ma; 50/60 hz 2500 v~ m d mounting torque (m4) 2.0 2.2 nm d s d a creep distance on surface strike distance through air 2.7 2.7 mm mm weight 40 g equivalent circuits for simulation ratings symbol defnitions conditions min. typ. max. unit v 0 r 0 rectifer diode d8 - d3 t vj = 25c 0.90 9 v m w v 0 r 0 igbt t - t6 t vj = 25c tbd tbd v m w v 0 r 0 free wheeling diode d - d6 t vj = 25c .5 4 v m w v 0 r 0 igbt t7 t vj = 25c .5 20 v m w v 0 r 0 free wheeling diode d7 t vj = 25c .46 63 v m w i v 0 r 0 t c = 25c unless otherwise stated input rectifer bridge d8 - d13 symbol defnitions conditions maximum ratings v rrm max. repetitive reverse voltage 600 v i fav i davm i fsm average forward current max. average dc output current max. surge forward current sine 80 t c = 80c rectangular; d = / 3 ; bridge t c = 80c t = 0 ms; sine 50 hz t c = 25c 3 89 320 a a a p tot total power dissipation t c = 25c 80 w symbol conditions characteristic values min. typ. max. v f forward voltage i f = 30 a t vj = 25c t vj = 25c .0 . .35 v v i r reverse current v r = v rrm t vj = 25c t vj = 25c 0.4 0.02 ma ma r thjc thermal resistance junction to case (per diode) t vj = 25c .4 k/w r thch thermal resistance case to heatsink (per diode) 0.45 k/w
? 2007 ixys all rights reserved 5 - 5 20073a MUBW30-12A6K ixys reserves the right to change limits, test conditions and dimensions. ordering part name marking on product delivering mode base qty ordering code standard mubw 30-2a6k mubw30-2a6k box 0 499 854 outline drawing dimensions in mm ( mm = 0.0394) product marking
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